A mechanism causing supersaturation of impurities during semiconductor crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference7 articles.
1. Thermodynamics of binary semiconductor-metal alloys
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2. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15
3. Atomic processes in crystal growth;Surface Science;1994-01
4. Behavior of Impurities during Chemical Vapor Deposition of GaAs;Journal of The Electrochemical Society;1976-05-01
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