Stoichiometry-dependent scattering of trimethylgallium from GaAs(100) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source
2. Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
3. Proc. 19th Int. Symp. GaAs and Related Compounds, Karuizawa;Yoshida,1993
4. Mechanism of surface reaction in GaAs layer growth
5. The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
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