Cluster model approach for electronic structure of Si and Ge(111) and GaAs(110) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference58 articles.
1. Effect of Relaxation and Reconstruction on the Electronic-Energy-Level Structure of the Si(111) Surface
2. Cluster model electronic structure calculations for the ideal and hydrogen chemisorbed Si (100) surfaces
3. Electronic structure of the (111) surface of semiconductors
4. Comment on the Relation of Relaxation to Electronic-Energy-Level Structure on the Si(111) Surface
5. Commentary on the Effect of Relaxation on the Electronic-Energy-Level Structure of the Si(111) Surface
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