Direct evidence of doppler shift in 10 keV Ar+ ion induced Si Auger emission
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference11 articles.
1. Ion bombardment induced photon and Auger emission for surface analysis
2. Low‐energy ion induced Auger electron spectra and energy thresholds for some pure elements, compounds, and alloys
3. Observation of a new atomic-like peak in the ion-induced Auger spectrum of Si
4. Ion-Induced Auger Electron Emission from Si Surface
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Potassium Auger emission by K+ ion bombardment of the Ni(100) surface;Surface Science;1992-01
2. Ion-induced Auger emission from Si, Al and AlxMg1−x samples;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-06
3. Angle-resolved Auger study of 10-keVAr+-ion-induced SiLMMatomic lines;Physical Review B;1990-06-15
4. Directional ejection of fast excited Si atoms during 10 KeV Ar+ ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1990-03
5. High energy (~ 107 eV) Si peak in Ar + excited auger emission from silicon and silicides;Surface Science;1989-10
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