Surface dangling bond state in Si(111) and epitaxial β-FeSi2 films: a comparative photoelectron spectroscopy study
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference24 articles.
1. Optical properties of semiconducting iron disilicide thin films
2. A clarification of the index of refraction of beta‐iron disilicide
3. Electronic properties of semiconducting FeSi2films
4. Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy
5. Surface characterization of epitaxial, semiconducting, FeSi2grown on Si(100)
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1. Characterization of surface electric field in β-FeSi2 by Franz–Keldysh oscillations;Journal of Applied Physics;2024-05-28
2. Synthesis of a Gold-Inserted Iron Disilicide and Rutile Titanium Dioxide Heterojunction Photocatalyst via the Vapor–Liquid–Solid Method and Its Water-Splitting Reaction;ACS Omega;2022-10-17
3. Investigation of the doping failure induced by DB in the SiNWs using first principles method;Acta Physica Sinica;2012
4. Epitaxial growth of silicon on silicon implanted with iron ions and optical properties of resulting structures;Technical Physics;2008-02
5. In situ differential reflectance spectroscopy study of early stages of .BETA.-FeSi2 silicide formation;e-Journal of Surface Science and Nanotechnology;2005
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