Valence-band discontinuities for abrupt (110), (100), and (111) oriented Ge-GaAs heterojunctions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference26 articles.
1. Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs
2. XPS measurements of abrupt Ge–GaAs heterojunction interfaces
3. Ge–GaAs(110) interface formation
4. Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities
5. XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence
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