Injection dependence of quasiballistic transport in GaAs at 77 K-Reference-Cited by-同舟云学术

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Injection dependence of quasiballistic transport in GaAs at 77 K

Published:1983-09 Issue:1-3 Volume:132 Page:623-636
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Hesto P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Proc. Workshop on the Physics of Submicron Structures;Bru,1982

2. Proc. 3rd Intern. Conf. on Hot Carriers in Semiconductors,1982

3. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors

4. Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6conduction‐band ordering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical Results for the Boltzmann Equation;Contributions to Plasma Physics;1997

2. Particle simulations of the semiconductor boltzmann equation for one-dimensional inhomogeneous structures;Journal of Computational Physics;1990-09

3. Deterministic particle simulations of the boltzmann transport equation of semiconductors;Journal of Computational Physics;1988-10

4. Extended moment equations for electron transport in semiconducting submicron structures;Journal of Applied Physics;1988-09

5. High-field transport phenomenology: Hot-electron generation at semiconductor interfaces;Physical Review B;1987-10-15

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