Growth of CoAl/AlAs/GaAs metal/ semiconductor heterostructures by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of CoAl/AlAs/GaAs metal/ semiconductor heterostructures by molecular beam epitaxy

Published:1992-01 Issue:1-3 Volume:267 Page:38-42
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Tanaka M.,Sakakibara H.,Nishinaga T.,Ikarashi N.,Ishida K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference6 articles.

1. Epitaxial growth of GaAs/NiAl/GaAs heterostructures

2. Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

3. Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE

4. Proc. 6th Int. Conf. on Molecular Beam Epitaxy;Kuo,1991

5. 9th Symp. Record of Alloy Semiconductor Physics and Electronics;Sano,1990

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of AlAs/CoAl/AlAs(001) heterostructures by controlling the metal surface;Journal of Applied Physics;1995-11-15

2. GaAs initial growth on InAs (001) vicinal surfaces observed by scanning tunneling microscopy;Journal of Crystal Growth;1995-05

3. Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxy;Journal of Applied Physics;1995-01

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