The influence of atomic steps on the photoelectric properties of clean cleaved silicon as derived from the surface photovoltage-Reference-Cited by-同舟云学术

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The influence of atomic steps on the photoelectric properties of clean cleaved silicon as derived from the surface photovoltage

Published:1977-12 Issue:2 Volume:69 Page:533-546
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Kuhlmann W,Henzler M

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference16 articles.

1. Electrical Properties of Semiconductor Surfaces;Frankl,1967

2. Semiconductor Surfaces;Many,1965

3. Proc. 2nd Intern. Conf. on Solid Surfaces;Henzler,1974

4. The roughness of cleaved semiconductor surfaces

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inhomogeneous band bending on MoS2(0001) arising from surface steps and dislocations;Journal of Physics: Condensed Matter;2012-07-04

2. Investigation of electron processes at the p and n type Si(111) real surface by the surface photovoltage method;Surface Science;1990-05

3. Spa-Leed Measurements on Etched and Polished Silicon (111) Surfaces;MRS Proceedings;1985

4. X-ray topography study of the cleaved Si-(111)-face;Applied Physics A Solids and Surfaces;1984-08

5. The first stages of the Au/Ge(111) interface formation;Surface Science;1982-12

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