Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)-Reference-Cited by-同舟云学术

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Complementary data obtained on the metal-semiconductor interface by LEED, AES and SEM: Pb/Ge(111)

Published:1983-10 Issue:2-3 Volume:133 Page:422-442
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Métois J.J.,Le Lay G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference35 articles.

1. Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report

2. The first stages of the Au/Ge(111) interface formation

3. Ge-Au interface formation vs. Si-Au interface formation: Are they different processes?

4. Isothermal desorption spectroscopy for the study of two-dimensional condensed phases

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1. Experimental measurements;Fundamental Physicochemical Properties of Germanene-Related Materials;2023

2. Open issues and future challenges;Fundamental Physicochemical Properties of Germanene-Related Materials;2023

3. Growth and morphology of Pb phases on Ge(111);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-11

4. Simulation of Epitaxial Growth by Means of Density Functional Theory, Kinetic Monte Carlo, and Phase Field Methods;Handbook of Crystal Growth;2015

5. Structural and electronic properties of the Pb/Ge(111)-β(3×3)R30∘surface studied by photoelectron spectroscopy and first-principles calculations;Physical Review B;2012-12-28

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