Mechanism of growth of ultrathin SiO2 layers on silicide substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance;Applied Physics Letters;2009-12-14
2. XPS and XAES study of interaction between Ni and Si(111), SiOx/Si(111) supports;Journal of Electron Spectroscopy and Related Phenomena;1993-05
3. Reactions at the Gd-Si(111)7×7 interface: Promotion of Si oxidation;Physical Review B;1990-12-15
4. Unusual room‐temperature intermixing and oxidation in copper deposited on a fluorinated amorphous silicon system;Applied Physics Letters;1988-01-18
5. CrSi2 formation and reduction of Cr2O3, during annealing of an oxidized Cr overlayer on Si(111);Surface Science;1986-12
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