Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells-Reference-Cited by-同舟云学术

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Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells

Published:1996-07 Issue: Volume:361-362 Page:420-423
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Ferreira A.C.,Buyanov A.V.,Holtz P.O.,Sernelius B.E.,Monemar B.,Mauritz O.,Ekenberg U.,Sundaram M.,Campman K.,Merz J.L.,Gossard A.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference18 articles.

1. Screening and correlation effects in degenerately center doped GaAs/AlGaAs single quantum wells

2. Doping-density dependence of photoluminescence in highly Si-doped GaAs/AlxGa1−xAs quantum wells from below to above the metallic limit

3. Band-gap shifts in heavilyp-type doped semiconductors of the zinc-blende and diamond type

4. Low temperature two-dimensional mobility of a GaAs heterolayer

5. Hole‐scattering mechanisms in modulation‐doped heterostructures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasmon shake-up effects in quantum-well exciton spectra;Journal of Physics: Condensed Matter;1996-11-11

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