Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: tuning of the remote-charge correlations-Reference-Cited by-同舟云学术

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Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure: tuning of the remote-charge correlations

Published:1996-07 Issue: Volume:361-362 Page:579-582
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Wisniewski P.,Suski T.,Litwin-Staszewska E.,Brunthaler G.,Köhler K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference17 articles.

1. Single-particle relaxation time versus scattering time in an impure electron gas

2. Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layer

3. Small-angle scattering in two-dimensional electron gases

4. Correlations of the remote impurity charges—A method of 2DEG mobility tuning in GaAs/AlGaAs heterostructures

5. Spatial correlations of remote impurity charges: Mechanism responsible for the high mobility of a two-dimensional electron gas

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth of high-mobility 2DEG;Molecular Beam Epitaxy;2013

2. Remote impurity scattering in modulation-dopedGaAs/AlxGa1−xAsheterojunctions;Physical Review B;1998-06-15

3. Chapter 5.3 Spatial Correlations of Impurity Charges in Doped Semiconductors;Semiconductors and Semimetals;1998

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