Impurity band conduction in cesium adsorbed n-channel Si inversion layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference7 articles.
1. Energy Structure in Photoelectric Emission from Cs-Covered Silicon and Germanium
2. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
3. Proc. 2nd Intern. Conf. on Solid Surfaces;Kawaguchi,1974
4. Resistivity and Hall Effect of Germanium at Low Temperatures
5. Electric Conduction in Phosphorus Doped Silicon at Low Temperatures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Experimental researches on quantum transport in semiconductor two-dimensional electron systems;Proceedings of the Japan Academy, Series B;2008
2. Adsorption of potassium on the ideal Si(111) surface;Physical Review B;1988-05-15
3. Electronic properties of two-dimensional systems;Reviews of Modern Physics;1982-04-01
4. Negative magnetoresistance in a two-dimensional impurity band in cesiated p-Si(111) surface inversion layers;Surface Science;1978-05
5. Recent progress in electronic properties of quasi-two-dimensional systems;Surface Science;1976-08
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