De-excitation processes near the surface of ion bombarded SiO2 and Si-Reference-Cited by-同舟云学术

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De-excitation processes near the surface of ion bombarded SiO2 and Si

Published:1976-11 Issue:2 Volume:60 Page:349-364
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Martin P.J,Bayly A.R,Macdonald R.J,Tolk N.H,Clark G.J,Kelly J.C

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference23 articles.

1. Characterization of Solid Surface;Kane,1974

2. Effects of nonradiative de-excitation of excited sputtered atoms near silicon and silicon dioxide surfaces

3. Bombardment-induced photon emission from Al and Al2O3 targets

4. Theory of Auger Ejection of Electrons from Metals by Ions

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3. Photon emission from clean and oxygenated Si and SiO2 surfaces bombarded by 5keV krypton ions;Applied Surface Science;2009-10

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5. Mechanism of Secondary Ion Emission from Silicon Dioxide Bombarded with Argon Ions;Japanese Journal of Applied Physics;1995-04-15

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