Interface properties and Schottky barriers on polar surfaces of CdS
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference8 articles.
1. Fermi Level Position at Metal-Semiconductor Interfaces
2. Surface States and Barrier Height of Metal‐Semiconductor Systems
3. Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds
4. Crystallographic Polarity in the II‐VI Compounds
5. Erratum: Crystallographic Polarity in the II‐VI Compounds
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1. Photoelectrochemical faceting of single crystal cadmium sulphide;Journal of Electroanalytical Chemistry and Interfacial Electrochemistry;1991-09
2. Schottky barrier formation between poly(3-methylthiophene) and n-type cadmium sulfide;Synthetic Metals;1989-01
3. Crystal-face specific electrochemical effects on cadmium sulphide;Surface Science;1987-10
4. Schottky Barriers on the Polar (111) and (\bar1\bar1\bar1) Surfaces of the p-GaP and p-GaAs Crystals;Japanese Journal of Applied Physics;1980-06
5. Effects of chemically etched CdS crystal surfaces on the barrier layer of Au-CdS junction diodes;Applications of Surface Science;1980-03
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