Application of high energy ion channeling to GaAs(110), Au-GaAs(110) and Pd-GaAs(110)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference38 articles.
1. The structure and properties of metal-semiconductor interfaces
2. MeV ion scattering for surface structure determination
3. Materials Analysis by Ion Channeling;Feldman,1982
4. The Characterization of GaAs Surfaces
5. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces
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1. Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-07
2. Calculation of Surface Peak Intensity of GaAs and InP in High-energy Ion Scattering;Surface and Interface Analysis;1996-05
3. Role of the electronic degrees of freedom in surface lattice dynamics: a phenomenological model study;La Rivista del Nuovo Cimento;1995-08
4. Radiation-induced damage in GaP by MeV Helium ions;Acta Physica Sinica (Overseas Edition);1994-02
5. Thirty years of atomic and electronic structure determination of surfaces of tetrahedrally coordinated compound semiconductors;Surface Science;1994-01
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