Piezoelectric control of doping and band structure in the crossed gap system GaSb/InAs-Reference-Cited by-同舟云学术

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Piezoelectric control of doping and band structure in the crossed gap system GaSb/InAs

Published:1992-02 Issue:1-3 Volume:263 Page:575-579
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Lakrimi M.,López C.,Martin R.W.,Summers G.M.,Sundaram G.M.,Dalton K.S.H.,Mason N.J.,Nicholas R.J.,Walker P.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference18 articles.

1. Theory of semiconductor superlattice electronic structure

2. Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer Superlattices

3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

4. Strain‐induced two‐dimensional electron gas in [111] growth‐axis strained‐layer structures

5. Magnetotransport of piezoelectric [111] oriented strained quantum wells

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of strained layer superlattices. II;Journal of Crystal Growth;1995-01

2. Growth of InAs/GaSb strained layer superlattices. I;Journal of Crystal Growth;1994-12

3. [001]- and piezoelectric-[111]-oriented InAs/GaSb structures under hydrostatic pressure;Physical Review B;1994-06-15

4. Observation of magnetic-field-induced semimetal-semiconductor transitions in crossed-gap superlattices by cyclotron resonance;Physical Review B;1994-04-15

5. Direct observation of the semimetal to semiconductor transition in crossed band gap superlattices at magnetic fields of up to 150 T;Solid-State Electronics;1994-04

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