The effect of the directed bonds on the low temperature field evaporation endform of germanium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference3 articles.
1. Field ion microscopy of germanium: Field ionization and surface states
2. The structure of field-evaporated surfaces
3. An Atlas of Models of Crystal Surfaces;Nicholas,1965
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. THE INTERACTION OF GeH4 WITH W, Ni AND Ge SURFACES IN HIGH ELECTRIC FIELDS;Le Journal de Physique Colloques;1988-11
2. Field evaporation of silicon and field desorption of hydrogen from silicon surfaces;Physical Review B;1983-08-15
3. Field penetration and band bending for semiconductor of simple geometries in high electric fields;Surface Science;1979-06
4. Field penetration and band bending near semiconductor surfaces in high electric fields;Surface Science;1979-02
5. Field ion and field desorption mass spectrometry of inorganic compounds;Surface Science;1978-01
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