Slow field induced relaxation on pure and Li-doped ZnO-Reference-Cited by-同舟云学术

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Slow field induced relaxation on pure and Li-doped ZnO

Published:1970-08 Issue:1 Volume:22 Page:76-92
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Van Hove H.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference17 articles.

1. Semiconductor Surface Physics;Morrison,1957

2. Relaxation Time of Surface States on Germanium

3. Semiconductor Surface Physics;Lasser,1957

4. Slow Surface Relaxation of Germanium

5. Semiconductor Surfaces;Many,1965

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Energy Spectrum of Semiconductor Surfaces;Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics;1987

2. Charging of pre-existing slow states of the real surface of epitaxial CdSe films during adsorption of acceptor molecules;Soviet Physics Journal;1981-03

3. Field-effect mobility in quantized accumulation layers on ZnO surfaces;Physical Review B;1979-04-15

4. Field effect measurements with Li2O-doped zinc oxide crystals in the presence of adsorbed rhodamine B;Physica Status Solidi (a);1975-09-16

5. Electric charges on stainless steel surfaces: The effects of hydrogen, charged particles, illumination, and electric fields on the work function;Surface Science;1973-01

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