Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)-Reference-Cited by-同舟云学术

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Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)

Published:1976-02 Issue:2 Volume:54 Page:229-258
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Gregory Paul E.,Spicer W.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference36 articles.

1. Ph.D. dissertation;Helms,1973

2. Hydrogen adsorption and surface structures of silicon

3. A Standard for Ultraviolet Radiation

4. Optical Properties of Semiconductors

5. Ph.D. dissertation;Eden,1967

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1. Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs(110);Physical Review Materials;2022-12-27

2. Fermi Level Pinning Controls Band Bending and Photochemical Charge Separation in Particles of n-SrTiO3, n-SrTiO3:Al, and n-GaAs:Te;The Journal of Physical Chemistry C;2020-07-30

3. The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure;Journal of Physics D: Applied Physics;2014-01-03

4. Hydrogen chemisorption on III–V semiconductor surfaces;Surface Science Reports;2003-09

5. HREELS investigation of hydrogenated GaAs(110) surfaces;Journal of Physics: Condensed Matter;1993-09-06

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