Wavevector-resolved electron-energy-loss spectroscopy on the dangling-bond states of Ge(111)-(2 × 1)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference15 articles.
1. Newπ-Bonded Chain Model for Si(111)-(2×1) Surface
2. Surface Structures and Properties of Diamond-Structure Semiconductors
3. Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and Si
4. Surface states on Si(111)-(2×1)
5. Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1
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1. Theory of electronic excitations on semiconductor surfaces;Applied Surface Science;1992-01
2. Structural and electronic properties of the (111)2×1 surface of Ge from first-principles calculations;Physical Review B;1991-12-15
3. Quasiparticle surface band structure and photoelectric threshold of Ge(111)-2×1;Physical Review B;1991-05-15
4. Inelastic scattering of electrons from accumulation and inversion layers;Physical Review B;1989-10-15
5. Antibonding surface state band of the Ge(111)2 × 1 surface;Surface Science;1989-08
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