Effects of an anomalous strain accommodating behavior of Si ad-dimers on the nucleation of regular and defect islands-Reference-Cited by-同舟云学术

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Effects of an anomalous strain accommodating behavior of Si ad-dimers on the nucleation of regular and defect islands

Published:1994-08 Issue:3 Volume:314 Page:L889-L896
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Toh C.P,Ong C.K

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference28 articles.

1. Molecular Beam Epitaxy;Herman,1989

2. Scanning Tunneling Microscopy I;Güntherod,1992

3. Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study

4. Kinetics of Ordering and Growth at Surfaces;Lagally,1989

5. Epitaxial growth of silicon on Si(001) by scanning tunneling microscopy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hot scanning tunneling microscope study of B type step edges and small silicon islands on Si(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05

2. Si(001) Step Dynamics;Physical Review Letters;1995-04-03

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