A photoemission study of coherently strained InxGa1−xAs/InP(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference32 articles.
1. Determination of the natural valence‐band offset in the InxGa1−xAs system
2. Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grownInxGa1−xAs/GaAs quantum wells
3. Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime
4. M. Rowen, private communication (1990).
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