Change of the surface induced optical anisotropy of the clean Si(110) surface by oxidation-Reference-Cited by-同舟云学术

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Change of the surface induced optical anisotropy of the clean Si(110) surface by oxidation

Published:1992-01 Issue:1-3 Volume:260 Page:31-36
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Wormeester H.,Molenbroek A.M.,Wijers C.M.J.,van Silfhout A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference24 articles.

1. Polarization dependent reflectivity of SI(111)-2X1 calculations and comparison with experiment

2. Dielectric functions of Si(111)2×1, Ge(111)2×1, GaAs(110) and GaP(110) surfaces obtained by polarized surface differential reflectivity

3. Optical spectroscopy of (110) surfaces of III–V semiconductors

4. F. Manghi, E. Molinari, R. Del Sole and A. Selloni, to be published.

5. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

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1. Optical properties of the long-range Si(110)-(16 × 2) reconstruction from first principles;physica status solidi (b);2012-02-22

2. Isotropic and anisotropic contributions to the optical reflection of Si(001)-2×1;Physical Review B;1997-08-15

3. Si(110)16 × 2 and Si(110)2 × 3-Sb surfaces studied by photoemission and optical spectroscopy;Applied Surface Science;1996-09

4. Broad spectrum optical phase retarder using three metallic mirrors for normal and Brewster’s angle of incidence ellipsometry;Review of Scientific Instruments;1996-05

5. Electronic states on clean Si(110)16×2 and Si(110)2×3-Sb surfaces by photoeemission and optical spectroscopy;Journal of Electron Spectroscopy and Related Phenomena;1995-12

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