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Comparisons of edge state versus bulk conduction in the quantum Hall regime

  • Published:1990-04 Issue:1-3 Volume:229 Page:37-39
  • ISSN:0039-6028
  • Container-title:Surface Science
  • language:en
  • Short-container-title:Surface Science

Author:

Syphers D.A.,Killoran J.H.,Brakewood H.E.,Reis F.,Stiles P.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Breakdown of the quantum Hall effect;Physica E: Low-dimensional Systems and Nanostructures;1999-04

2. Potential distribution on multiple bridge devices in quantizing magnetic fields;Semiconductor Science and Technology;1995-04-01

3. Long time tails in the quantum Hall effect;Zeitschrift f�r Physik B Condensed Matter;1994-03

4. Breakdown of the quantum Hall effect as a function of the filling factor and the contact configuration;Journal of Physics: Condensed Matter;1992-04-13

5. Modelling the breakdown of the quantum hall effect in silicon-MISFET'S and GaAs/GaAlAs-heterostructures;Superlattices and Microstructures;1992-01
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