Measurement of physical properties of gallium arsenide and silicon by electrochemical methods
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference20 articles.
1. Elektrokhimiya Poluprovodnikov;Myamlin,1965
2. On the origin of the photo-emf at the gallium-arsenide/electrolyte interface
3. Differential Capacitance of GaAs-Electrolyte Contact
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1. Electrochemical investigation of SiO2Si equivalent charges;Solid-State Electronics;1981-01
2. Applications of Electrochemical Methods for Semiconductor Characterization: I . Highly Reproducible Carrier Concentration Profiling of VPE “Hi‐Lo”;Journal of The Electrochemical Society;1980-01-01
3. TRAPS IN SiO2-Si STRUCTURE DETERMINED BY ELECTROCHEMICAL METHOD;The Physics of MOS Insulators;1980
4. Properties of boron implanted silicon dioxide;Applications of Surface Science;1979-07
5. Electrochemical method to determine physical surface properties of rare-earth and manganese fluoride doped CdF2 crystals;Physica Status Solidi (a);1979-06-16
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