The contribution of surface effects to the surface photovoltage dependence on temperature for the real Si(111) surface-Reference-Cited by-同舟云学术

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The contribution of surface effects to the surface photovoltage dependence on temperature for the real Si(111) surface

Published:1988-07 Issue:2-3 Volume:200 Page:172-178
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Adamowicz B.,Kochowski S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference12 articles.

1. Semiconductor Surfaces;Many,1965

2. Semiconductor Surfaces;Many,1965

3. Surface Physics of Phosphors and Semiconductors,1975

4. Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulses

5. Barrière de surface d'un semiconducteur en fonction de la température dans le cas de distributions complexes d'états. Calcul et exploitation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-band gap transitions in the surface photovoltage spectra for GaAs, GaP and Si surfaces;Surface Science;1991-05

2. Investigation of electron processes at the p and n type Si(111) real surface by the surface photovoltage method;Surface Science;1990-05

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