First principles study of arsenic incorporation on a GaAs(001) surface during MBE growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
2. Reflection high‐energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurements
3. Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
4. Origin of Reflection High-Energy Electron-Diffraction Intensity Oscillations during Molecular-Beam Epitaxy: A Computational Modeling Approach
5. Adatom processes near step‐edges and evolution of long range order in semiconductor alloys grown from vapor phase
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