Anomalously low vacancy formation energies and migration barriers at Cu/AlN interfaces from ab initio calculations-Reference-Cited by-同舟云学术

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Anomalously low vacancy formation energies and migration barriers at Cu/AlN interfaces from ab initio calculations

Published:2024-07 Issue: Volume:248 Page:116126
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Muller Yann^ORCID,Antušek Andrej,Jeurgens Lars P.H.,Turlo Vladyslav^ORCID

Funder

SNSF

Publisher

Elsevier BV

Reference29 articles.

1. A review of interface microstructures in electronic packaging applications: brazing and welding technologies;Vianco;JOM,2022

2. Microstructure-property control in functional materials by multilayer design;Cancellieri;Chimia,2022

3. Interfacial design for joining technologies: an historical perspective;Janczak-Rusch;J. Mater. Eng. Perform.,2014

4. Fundamentals of metal-induced crystallization of amorphous semiconductors;Wang;Adv. Eng. Mater.,2009

5. Self-propagating high-temperature synthesis of advanced materials and coatings;Levashov;Int. Mater. Rev.,2017

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