XPS study of a SiC film produced on Si(100) by reaction with a C2H2 beam
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference19 articles.
1. Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
2. THE GROWTH OF SINGLE‐CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
3. Growth of β-silicon carbide on silicon
4. Conversion of Si to epitaxial SiC by reaction with C2H2
5. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
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