Solid phase epitaxy and characterization of FeSi2 layers on Si(111)-Reference-Cited by-同舟云学术

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Solid phase epitaxy and characterization of FeSi2 layers on Si(111)

Published:1992-01 Issue: Volume:56-58 Page:444-448
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Scarinci F.,Lagomarsino S.,Giannini C.,Savelli G.,Castrucci P.,Rodia A.,Scopa L.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. A clarification of the index of refraction of beta‐iron disilicide

2. Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy

3. The influence of steps on the epitaxial growth of iron-silicide on Si(001)

4. Epitaxial films of semiconducting FeSi2on (001) silicon

5. The growth and characterization of iron silicides on Si(100)

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice dynamics of β−FeSi2 nanorods;Physical Review B;2022-11-17

2. Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement;Journal of Electronic Materials;2016-10-06

3. In-situcharacterization of iron silicide islands on Si(111);Philosophical Magazine;2004-09

4. Stress evolution during the growth of ultrathin layers of iron and iron silicide on Si(111);Applied Physics Letters;1995-09-25

5. X-ray photoelectron spectroscopy and scanning electron microscopy of β-FeSi2 films grown by Ion Beam assisted deposition;Surface and Interface Analysis;1994-07

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