High-energy-ion-induced damages at metal-silicon interfaces during channeling measurements-Reference-Cited by-同舟云学术

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High-energy-ion-induced damages at metal-silicon interfaces during channeling measurements

Published:1992-01 Issue: Volume:56-58 Page:469-473
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Moon Jong,Ito Toshimichi,Hiraki Akio

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference16 articles.

1. Metal/Silicon Reactions Studied by High Energy Jon Scattering

2. Initial stage of room-temperature metal-silicide formation studied by high-energyHe+-ion scattering

3. Structure study of Au–Si interface by MeV ion scattering

4. The adsorption of Ag on the Si(111) 7×7 surface at room temperature studied by medium energy ion scattering, LEED and AES

5. Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reactivity and stability of various metal-silicon interfaces studied by high energy ion scattering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-12

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