Infrared spectroscopy in p-type SiGe/Si quantum wells-Reference-Cited by-同舟云学术

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Infrared spectroscopy in p-type SiGe/Si quantum wells

Published:1996-08 Issue: Volume:102 Page:331-335
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Berroir J.M.,Zanier S.,Guldner Y.,Vieren J.P.,Sagnes I.,Campidelli Y.,Badoz P.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference14 articles.

1. Intersubband absorption in Si1−xGex/Si multiple quantum wells

2. Intervalence‐subband transition in SiGe/Si multiple quantum wells−normal incident detection

3. Broadband (8–14 μm), normal incidence, pseudomorphic GexSi1−x/Si strained‐layer infrared photodetector operating between 20 and 77 K

4. Bound‐to‐bound intersubband transitions in a δ‐dopedp‐type Si/SixGe1−x/Si quantum well

5. Systematic study of intersubband absorption in modulation-doped p-typeSi/Si1−xGex quantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling of an intersubband quantum confined Stark effect in Ge quantum wells for mid-infrared photonics;Optics Express;2022-12-07

2. Many-body carrier interaction effects in quantum wells;Physical Review B;1997-02-15

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