Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference10 articles.
1. Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs
2. Raman scattering studies of surface space charge layers and Schottky barrier formation in InP
3. First-order Raman line intensity ratio in GaAs: a potential lattice perfection scale
4. Correlation of Fermi‐level energy and chemistry at InP(100) interfaces
5. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
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1. Analysis of InGaAs/InP p-I-n Photodiode Failed by Electrostatic Discharge;Journal of Electronic Materials;2023-05-24
2. Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces;Semiconductors;2023-05
3. Abnormal electronic structure of chemically modified n-InP(100) surfaces;Journal of Materials Chemistry C;2022
4. Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions;Semiconductors;2021-11
5. TO-phonon anisotropies in a highly doped InP (001) grating structure;Applied Physics Letters;2021-10-04
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