Reflectance anisotropy from (001) GaAs surfaces during pseudo-ALE growth of GaAs-Reference-Cited by-同舟云学术

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Reflectance anisotropy from (001) GaAs surfaces during pseudo-ALE growth of GaAs

Published:1993-05 Issue:1-4 Volume:69 Page:46-51
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Armstrong S.R.,Hoare R.D.,Povey I.M.,Pemble M.E.,Stafford A.,Taylor A.G.,Klug D.R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference23 articles.

1. Optical second-harmonic generation for studying surfaces and interfaces

2. Antimony adsorption on silicon (111) analyzed in real time by in situ ellipsometry

3. Surface properties probed by second-harmonic and sum-frequency generation

4. The dynamic interaction of triethyl gallium with GaAs(100) surfaces monitored using optical second-harmonic generation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel quantum confined structures via atmospheric pressure MOCVD growth in asbestos and opals;Journal of Crystal Growth;1997-01

2. Reflectance anisotropy as an in situ monitor for the growth of InP on (001) InP by pseudo-atmospheric pressure atomic layer epitaxy;Journal of Crystal Growth;1997-01

3. Reflection;Optical Diagnostics for Thin Film Processing;1996

4. Reflectance anisotropy studies of the growth of InP on InP(001) at atmospheric pressures using tertiarybutylphosphine and trimethylindium;Surface Science;1994-04

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