Comparison of laser and line-electron beam recrystallization of thin polycrystalline silicon films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference11 articles.
1. Silicon-on-insulator for VLSI and VHSIC;Lam,1982
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3. Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse Annealing
4. Characterization of the Dual E‐Beam Technique for Recrystallizing Polysilicon Films
5. Zone‐Melting Recrystallization of Si Films with a Moveable‐Strip‐Heater Oven
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1. SiC formation and influence on the morphology of polycrystalline silicon thin films on graphite substrates produced by zone melting recrystallization;Thin Solid Films;1999-01
2. SiC formation and influence on the morphology of polycrystalline silicon thin films on graphite substrates produced by zone melting recrystallization;Thin Solid Films;1998-08
3. A study on WSi2 thin films, formed by the reaction of tungsten with solid or liquid silicon, by rapid thermal annealing;Thin Solid Films;1994-03
4. Rapid thermal and large area processing of thin films with a line electron beam;Applied Surface Science;1993-05
5. Rapid thermal and large area processing of Si and FeSi2 films with a line electron beam;Applied Surface Science;1993-03
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