In-process control of silicide formation during rapid thermal processing-Reference-Cited by-同舟云学术

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In-process control of silicide formation during rapid thermal processing

Published:1993-01 Issue:1-4 Volume:63 Page:131-134
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Dilhac J.-M.,Ganibal C.,Nolhier N.,Moynagh P.B.,Chew C.P.,Rosser P.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Single-wafer integrated semiconductor device processing

2. F. Roozeboom, Rapid Thermal Processing Science and Technology, Ed. R.B. Fair (Academic Press, New York), to be published.

3. Insitureflectivity measurement in a rapid thermal processor for the study of platinum silicide formation

4. In situ silicon solid state regrowth kinetics measurement in a rapid thermal processor

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Additive manufacturing of high strength copper alloy with heterogeneous grain structure through laser powder bed fusion;Acta Materialia;2021-11

2. Atomic force microscope investigation of the thermal stability of thin TiSi2 films;Journal of Materials Research;1998-07

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