Correlation of photoluminescence and nuclear characterization of In-implanted silicon-Reference-Cited by-同舟云学术

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Correlation of photoluminescence and nuclear characterization of In-implanted silicon

Published:1993-01 Issue:1-4 Volume:63 Page:232-235
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Henry M.O.,Kehoe T.B.,Nazare M.H.,Freitag K.,Vianden R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy

2. Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon

3. A photoluminescence investigation of local mode vibrations of the beryllium pair centre in silicon

4. A simple apparatus for uniaxial piezo-spectroscopic measurements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the 1096.9 meV photoluminescent oxygen-related centre in neutron-irradiated CZ-Si: Formation and structure;Radiation Effects and Defects in Solids;1999-11

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