Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth-Reference-Cited by-同舟云学术

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Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth

Published:1992-01 Issue: Volume:56-58 Page:597-603
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Etgens V.H.,Pinchaux R.,Sauvage-Simkin M.,Massies J.,Jedrecy N.,Greiser N.,Waldhauer A.,Tatarenko S.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Early stage of growth for (001) ZnTe and (111) CdTe on (001) GaAs: A structural study of the interface using conventional and grazing-incidence X-ray diffraction

2. Adsorption of Te on GaAs(100)

3. Surface structure determination by X-ray diffraction

4. Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study

5. Strain relaxation during the initial stages of growth in Ge/Si(001)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of a ZnMnTe buffer layer on the growth of ZnTe on (001)GaAs by MOVPE;Journal of Crystal Growth;2003-02

2. X-RAY DIFFRACTION FOR SURFACES AND BURIED INTERFACES;Surface Review and Letters;2000-08

3. Structural properties of ZnTe/Zn(S,Te)-superlattices grown by molecular beam epitaxy on (0 0 1) GaAs-substrates;Journal of Crystal Growth;1998-02

4. The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties;Progress in Crystal Growth and Characterization of Materials;1995-01

5. CdTe/GaAs(100) heterojunctions: Growth modification by thin silicon interface layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07

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