Internally detected electron photoexcitation spectroscopy on heterostructures-Reference-Cited by-同舟云学术

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Internally detected electron photoexcitation spectroscopy on heterostructures

Published:1992-01 Issue: Volume:56-58 Page:733-737
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Coluzza C.,Neglia A.,Bennouna A.,Capizzi M.,Carluccio R.,Frova A.,Srivastava P.C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. The structure and properties of metal-semiconductor interfaces

2. Metallization and Metal-Semiconductor Interfaces,1988

3. Heterojunction Band Discontinuities — Physics and Device Applications,1987

4. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States

5. Perspectives on III–V compound MIS structures

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1. Photoexcitation Spectroscopy and Material Alteration with Free-Electron Laser;Acta Physica Polonica A;1997-04

2. Free-electron laser wavelength-selective materials alteration and photoexcitation spectroscopy;Applied Surface Science;1996-10

3. Ultra accurate measurements of interface parameters with free-electron laser;Applied Surface Science;1996-02

4. FREE-ELECTRON LASER SPECTROSCOPY OF SURFACES AND INTERFACES;Surface Review and Letters;1995-08

5. Effect of bias annealing on Au/n‐Si Schottky barrier with hydrogen incorporation;Journal of Applied Physics;1994-11

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