Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistance-Reference-Cited by-同舟云学术

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Interrupted cycle chemical beam epitaxy of gallium phosphide on silicon with or without photon assistance

Published:1995-02 Issue:1-4 Volume:86 Page:453-456
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kelliher J.T.,Miller A.E.,Dietz N.,Habermehl S.,Chen Y.L.,Lu Z.,Lucovsky G.,Bachmann K.J.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Efficient photo‐enhancement of GaP and AlGaP growth in chemical beam epitaxy

2. MOCVD growth and characterization of GaP on Si

3. Proc. 18th SOTAPOCS V93-27;Kelliher,1993

4. Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructures

5. Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ZnO Thin Films Grown on Si(100) Substrates with Growth Interrupted Buffer Layers by Using Plasma-assisted Molecular Beam Epitaxy;Journal of the Korean Physical Society;2011-03-15

2. Effects of Interruption Growth on Properties of ZnO Active Layers Grown by Plasma-assisted Molecular Beam Epitaxy;Journal of the Korean Physical Society;2010-09-15

3. Chemical Beam Epitaxy;Encyclopedia of Materials: Science and Technology;2001

4. Initial Stages of Heteroepitaxy of GaP on Selected Silicon Surfaces;Journal of The Electrochemical Society;1999-03-01

5. Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance;Journal of Crystal Growth;1998-01

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