Sub-atomic-layer epitaxy of Si using Si2H6-Reference-Cited by-同舟云学术

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Sub-atomic-layer epitaxy of Si using Si2H6

Published:1994-12 Issue: Volume:82-83 Page:332-337
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Suda Yoshiyuki,Ishida Masahiro,Yamashita Mitsutomi,Ikeda Hiroaki

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Atomic layer epitaxy

2. Molecular layer epitaxy of silicon

3. Germanium Atomic Layer Epitaxy Controlled by Surface Chemical Reactions

4. Microphysics of Surfaces Beams and Adsorbates, 1989;Suda,1989

5. Extended Abstracts 21st Conf. Solid State Devices and Materials;Suda,1989

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1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14

2. Challenges in Atomic Layer Deposition;Atomic Layer Deposition of Nanostructured Materials;2012-01-02

3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15

4. Si submonolayer and monolayer digital growth operation techniques using Si2H6 as atomically controlled growth nanotechnology;Applied Surface Science;2003-06

5. Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system;Journal of Crystal Growth;2000-02

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