Morphology of epitaxial SrF2 films on atomically modified InP(100)-Reference-Cited by-同舟云学术

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Morphology of epitaxial SrF2 films on atomically modified InP(100)

Published:1994-12 Issue: Volume:82-83 Page:507-515
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Heun S.,Sugiyama M.,Maeyama S.,Watanabe Y.,Oshima M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference56 articles.

1. Fluoride dielectric films on InP for metal‐insulator‐semiconductor applications

2. Heteroepitaxial growth and characterization of SrF2/(100)InP

3. Electrical properties of SrF2/InP (100) diodes and SrF2 thin films

4. Characterization of SrF2 thin films and of SrF2/InP structures

5. Lattice-matched single-crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular-beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Soft X-ray photoemission studies of;Surface Science;1997-04

2. MBE growth of fluorides;Microelectronics Journal;1996-07

3. Initial stages of the growth ofSrF2on InP;Physical Review B;1995-11-15

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