Sub-monolayer coverages of Be grown on GaAs(001)-c(4 × 4) and (2 × 4)-β by molecular beam epitaxy studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction-Reference-Cited by-同舟云学术

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Sub-monolayer coverages of Be grown on GaAs(001)-c(4 × 4) and (2 × 4)-β by molecular beam epitaxy studied by reflectance anisotropy spectroscopy and reflection high-energy electron diffraction

Published:1996-09 Issue:1 Volume:103 Page:71-78
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Rose K.C.,Woolf D.A.,Morris S.J.,Westwood D.I.,Williams R.H.,Richter W.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Beryllium δ doping of GaAs grown by molecular beam epitaxy

2. Delta doping of III–V compound semiconductors: Fundamentals and device applications

3. Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study

4. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

5. Delta- (°-) doping in MBE-grown GaAs: Concept and device application

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