Semiconductor bond rupture phenomena and surface properties-Reference-Cited by-同舟云学术

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Semiconductor bond rupture phenomena and surface properties

Published:1996-02 Issue: Volume:92 Page:484-490
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Haneman D.,McAlpine N.S.,Busch E.,Kaalund C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. Cleavage luminescence from silicon

2. Progression of cleavage in Si, Ge, and GaAs

3. Precision determination of long-wavelength cleavage luminescence energy and derivation of minimum surface state gap on clean cleaved Si surfaces

4. Surface barriers and potentials from luminescence on cleaved Si, GaAs, and InP

5. Cleavage luminescence from InP, Ge and GexSi1−x

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fracture strength of micro- and nano-scale silicon components;Applied Physics Reviews;2015-06

2. Terahertz surfoluminescence;Surface Science;2012-11

3. Atomic origin of hysteresis during cyclic loading of Si due to bond rearrangements at the crack surfaces;The Journal of Chemical Physics;2005-12-22

4. Electrical and luminescent properties of ZnO:Bi,Er ceramics sintered at different temperatures;Journal of Luminescence;2003-06

5. Electric and luminescent properties of ZnO-based ceramics containing small amounts of Er and Mn oxide;Journal of Luminescence;2003-06

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