Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures-Reference-Cited by-同舟云学术

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Theory of room temperature quantized resistance steps in electroformed metal-a-Si:H-metal structures

Published:1996-02 Issue: Volume:92 Page:579-584
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hajto J.,McAuley B.,Snell A.J.,Milburn G.H.W.,Owen A.E.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. Quantised electron effects in metal/a-Si:H/metal thin film structures

2. Analogue memory and ballistic electron effects in metal-amorphous silicon structures

3. Room temperature conductance quantization in V‖amorphous‐V2O5‖V thin film structures

4. Possible quantum effects in amorphous silicon double Schottky diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Conductance quantization in amorphous silicon switches;Physical Review B;2004-11

2. DC and ac measurements on metal/a-Si:H/metal room temperature quantised resistance devices;Journal of Non-Crystalline Solids;2000-05

3. Temperature dependence of quantised resistance steps in electroformed metal–a-Si:H–metal structures;Journal of Non-Crystalline Solids;1998-05

4. Electroluminescence from amorphous-silicon-based switching devices;Journal of Materials Research;1997-01

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