Technological aspects of epitaxial CoSi2 layers for CMOS-Reference-Cited by-同舟云学术

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Technological aspects of epitaxial CoSi2 layers for CMOS

Published:1993-11 Issue: Volume:73 Page:19-24
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Lauwers A.,Schreutelkamp R.J.,Brijs B.,Bender H.,Maex K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference11 articles.

1. Growth of epitaxial CoSi2on (100)Si

2. Nanoscale CoSi2contact layer growth from deposited Co/Ti multilayers on Si substrates

3. Formation of epitaxial CoSi2on Si(100): Role of the annealing ambient

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1. Oxide-mediated formation of epitaxy silicide on heavily doped Si surfaces and narrow width active region;Thin Solid Films;2006-03

2. Thermal stability study on nanoscale polysilicide resistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

3. The growth of CoSi2 thin film in Co/W/Si(100) multilayer structures;Solid State Communications;2003-11

4. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11

5. Formation and Properties of Epitaxial CoSi2Layers on p-Si0.83Ge0.17/p-Si(001) using a Si Capping Layer by Metal-Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-06-15

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