Electrical properties of neutron-transmutation-doped InSe
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference14 articles.
1. Structure cristalline du monoséléniure d'indium InSe
2. Electron scattering mechanisms inn-type indium selenide
3. Tin-related shallow donor in indium selenide
4. Free Carrier Absorption in n-Type Indium Selenide
5. Phosphorus doping of silicon by means of neutron irradiation
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1. Optical Absorption, Photocarrier Recombination Dynamics and Terahertz Dielectric Properties of Electron-Irradiated GaSe Crystals;Crystals;2023-11-01
2. In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor;eLight;2022-06-06
3. Two-band conduction in electron-irradiated n-InSe single crystals;physica status solidi (b);2014-09-26
4. Optical and electrical properties of thermally evaporated In49Se48Sn3 films;Physica B: Condensed Matter;2009-08
5. Photoluminescence of undoped and neutron-transmutation-doped InSe;Journal of Applied Physics;2000
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