Incorporation of metal silicides and refractory metals in VLSI technology-Reference-Cited by-同舟云学术

Incorporation of metal silicides and refractory metals in VLSI technology

Published:1991-11 Issue: Volume:53 Page:291-312
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Osburn C.M.,Wang Q.F.,Kellam M.,Canovai C.,Smith P.L.,McGuire G.E.,Xiao Z.G.,Rozgonyi G.A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference87 articles.

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4. Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologies

5. Development of the Self-Aligned Titanium Silicide Process for VLSI Applications

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